advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v small package outline r ds(on) 5 surface mount device i d 0.25a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 180 /w data and specifications subject to change without notice 1 ap2320n-hf halogen-free product 201211142 parameter rating drain-source voltage 100 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 0.25 continuous drain current 3 , v gs @ 10v 0.2 pulsed drain current 1 1 total power dissipation 0.7 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range g d s ap2320 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the special design sot-23s package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. d g s sot-23s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =0.25a - - 5 v gs =4.5v, i d =0.2a - - 9 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =0.2a - 0.2 - s i dss drain-source leakage current v ds =100v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =0.4a - 2 3.2 nc q gs gate-source charge v ds =80v - 0.5 - nc q gd gate-drain ("miller") charge v gs =10v - 0.5 - nc t d(on) turn-on delay time v ds =50v - 3 - ns t r rise time i d =0.4a - 7 - ns t d(off) turn-off delay time r g =3.3 - 9.5 - ns t f fall time v gs =10v - 4.5 - ns c iss input capacitance v gs =0v - 32 51 pf c oss output capacitance v ds =25v - 9.5 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.4a, v gs =0v - - 1.5 v t rr reverse recovery time i s =1a, v gs =0v, - 27 - ns q rr reverse recovery charge di/dt=100a/s - 28 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 400 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap2320n-hf
ap2320n-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 0.2 0.4 0.6 0.8 1 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 0.2 0.4 0.6 0.8 1 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 9 .0v 8 .0v 7.0 v v g = 6 .0 v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 0.25 a v g =10v 0.1 1 10 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) i d =250ua
ap2320n-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 2 4 6 8 10 12 0123 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 0.4 a v ds =80v 1 10 100 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 400 /w t t 0.02 operation in this area limited by r ds(on)
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